These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Supplied in packs of 50 in ammo tape. Leg spacing 0.1"
• Fast Switching Times
• Improved Inductive Ruggedness
• Lower Input Capacitance
• Extended Safe Operating Area
• Improved High-Temperature Reliability
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