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STP80PF55 55V <0.018Ω 80A
Features
■ Extremely dv/dt capability
■ 100% avalanche tested
■ Application oriented characterizationApplication
■ Switching applications
Description
These Power MOSFETs are the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche
characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility.
- MOSFET, P, TO-220
- Transistor Polarity:P Channel
- Continuous Drain Current Id:80A
- Drain Source Voltage Vds:55V
- On Resistance Rds(on):18mohm
- Rds(on) Test Voltage Vgs:-10V
- Threshold Voltage Vgs Typ:-3V
- Power Dissipation Pd:300W
- SVHC:No SVHC (20-Jun-2011)
- Current Id Max:80A
- Current Temperature:25°C
- Full Power Rating Temperature:25°C
- Power Dissipation Pd:300W
- Voltage Vds Typ:-55V
- Voltage Vgs Max:3V
- Voltage Vgs Rds on Measurement:-10V
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